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BFU730LXZ Технические параметры

NXP USA Inc.  BFU730LXZ technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case 3-XFDFN
Current-Collector (Ic) (Max) 30mA
Packaging Tape & Reel (TR)
Published 2010
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Свойство продукта Значение свойства
Base Part Number BFU730
Pin Count 3
Power - Max 160mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 205 @ 2mA 3V
Gain 15.8dB
Voltage - Collector Emitter Breakdown (Max) 3V
Frequency - Transition 53GHz
Noise Figure (dB Typ @ f) 0.75dB @ 6GHz
RoHS Status ROHS3 Compliant
Просмотр сходства
BFU730LXZ brand manufacturers: NXP USA Inc., Anli stock, BFU730LXZ reference price.NXP USA Inc.. BFU730LXZ parameters, BFU730LXZ Datasheet PDF and pin diagram description download.You can use the BFU730LXZ Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find BFU730LXZ pin diagram and circuit diagram and usage method of function,BFU730LXZ electronics tutorials.You can download from the Anli.