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BLS3135-10,114 Технические параметры
NXP USA Inc. BLS3135-10,114 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | ||
| Mounting Type | Surface Mount | |
| Package / Case | SOT-445C | |
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Current-Collector (Ic) (Max) | 1.5A | |
| Number of Elements | 1 Element | |
| Operating Temperature | 200°C TJ | |
| Packaging | Tray | |
| Published | 2000 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| Additional Feature | HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Reach Compliance Code | unknown | |
| Base Part Number | BLS3135 | |
| Pin Count | 2 | |
| JESD-30 Code | R-CDFM-F2 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Case Connection | BASE | |
| Power - Max | 34W | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 250mA 5V | |
| Gain | 9dB | |
| Voltage - Collector Emitter Breakdown (Max) | 75V | |
| Frequency - Transition | 3.5GHz | |
| Highest Frequency Band | S B | |
| RoHS Status | ROHS3 Compliant |
BLS3135-10,114 Документы
- DatasheetsBLS3135-10
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