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BLT50,115 Технические параметры
NXP USA Inc. BLT50,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | ||
| Factory Lead Time | 16 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-261-4, TO-261AA | |
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Current-Collector (Ic) (Max) | 500mA | |
| Number of Elements | 1 Element | |
| Operating Temperature | 175°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 1998 | |
| JESD-609 Code | e3 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 4Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) | |
| Additional Feature | HIGH RELIABILITY | |
| HTS Code | 8541.29.00.75 | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Peak Reflow Temperature (Cel) | 260 | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Base Part Number | BLT50 | |
| Pin Count | 4 | |
| JESD-30 Code | R-PDSO-G4 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Case Connection | COLLECTOR | |
| Power - Max | 2W | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 300mA 5V | |
| Voltage - Collector Emitter Breakdown (Max) | 10V | |
| Frequency - Transition | 470MHz | |
| Power Dissipation-Max (Abs) | 2W | |
| Highest Frequency Band | ULTRA HIGH FREQUENCY B | |
| Collector-Base Capacitance-Max | 6pF | |
| Power Dissipation Ambient-Max | 2W | |
| Power Gain-Min (Gp) | 10dB | |
| RoHS Status | ROHS3 Compliant |
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