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BS108,126 Технические параметры

NXP USA Inc.  BS108,126 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount NO
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 300mA Ta
Drive Voltage (Max Rds On, Min Rds On) 2.8V
Number of Elements 1 Element
Power Dissipation (Max) 1W Ta
Operating Temperature -55°C~150°C TJ
Packaging Tape & Box (TB)
Published 2001
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code 8541.29.00.95
Свойство продукта Значение свойства
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code O-PBCY-T3
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5 Ω @ 100mA, 2.8V
Vgs(th) (Max) @ Id 1.8V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 120pF @ 25V
Drain to Source Voltage (Vdss) 200V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 0.3A
Drain-source On Resistance-Max 5Ohm
DS Breakdown Voltage-Min 200V
Feedback Cap-Max (Crss) 15 pF
RoHS Status ROHS3 Compliant

BS108,126 Документы

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