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BT168G,112 Технические параметры
NXP USA Inc. BT168G,112 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Thyristors - SCRs | |
| Марка | ||
| Contact Plating | Tin | |
| Mount | Through Hole | |
| Surface Mount | NO | |
| Number of Pins | 3Pins | |
| Number of Terminals | 3Terminals | |
| RoHS | Compliant | |
| Package | Bulk | |
| Base Product Number | BT168 | |
| Mfr | NXP USA Inc. | |
| Product Status | Active | |
| Package Description | PLASTIC, SC-43A, 3 PIN | |
| Package Style | CYLINDRICAL | |
| Leakage Current-Max | 0.1 mA | |
| Package Body Material | PLASTIC/EPOXY | |
| Manufacturer Package Code | SOT54 | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 125 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | BT168G,112 | |
| Package Shape | ROUND | |
| Manufacturer | NXP Semiconductors | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Risk Rank | 5.13 | |
| Part Package Code | TO-92 | |
| Series | * | |
| JESD-609 Code | e3 | |
| Terminal Finish | Tin (Sn) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Max Operating Temperature | 125 °C | |
| Min Operating Temperature | -40 °C | |
| Additional Feature | SENSITIVE GATE | |
| HTS Code | 8541.30.00.80 | |
| Subcategory | Silicon Controlled Rectifiers | |
| Terminal Position | BOTTOM | |
| Terminal Form | THROUGH-HOLE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Pin Count | 3 | |
| JESD-30 Code | O-PBCY-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Max Repetitive Reverse Voltage (Vrrm) | 600 V | |
| JEDEC-95 Code | TO-92 | |
| RMS Current (Irms) | 800 mA | |
| Hold Current | 5 mA | |
| Trigger Device Type | SCR | |
| Repetitive Peak Off-state Voltage | 600 V | |
| Non-Repetitive Pk On-state Cur | 8 A | |
| Critical Rate of Rise of Off-State Voltage-Min | 500 V/us | |
| Repetitive Peak Reverse Voltage | 600 V | |
| RMS On-state Current-Max | 0.8 A | |
| Holding Current-Max | 5 mA | |
| DC Gate Trigger Current-Max | 0.2 mA | |
| DC Gate Trigger Voltage-Max | 0.8 V | |
| Circuit Commutated Turn-off Time-Nom | 100 µs | |
| Repetitive Peak Off-state Leakage Current-Max | 100 µA | |
| Radiation Hardening | No | |
| Lead Free | Lead Free |
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