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BUK6211-75C Технические параметры
NXP USA Inc. BUK6211-75C technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Surface Mount | YES | |
| Number of Pins | 3Pins | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | SILICON | |
| RoHS | Compliant | |
| Package Description | PLASTIC, SC-63, DPAK-3 | |
| Package Style | SMALL OUTLINE | |
| Moisture Sensitivity Levels | 1 | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | 30 | |
| Operating Temperature-Max | 175 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | BUK6211-75C | |
| Package Shape | RECTANGULAR | |
| Manufacturer | NXP Semiconductors | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Risk Rank | 5.73 | |
| Part Package Code | TO-252 | |
| Drain Current-Max (ID) | 74 A | |
| Packaging | Cut Tape | |
| JESD-609 Code | e3 | |
| ECCN Code | EAR99 | |
| Resistance | 9.3 mΩ |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Finish | PURE TIN | |
| Max Operating Temperature | 175 °C | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Max Power Dissipation | 158 W | |
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | unknown | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSSO-G2 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 158 W | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Drain to Source Voltage (Vdss) | 75 V | |
| Polarity/Channel Type | N-CHANNEL | |
| Continuous Drain Current (ID) | 74 A | |
| Threshold Voltage | 2.3 V | |
| JEDEC-95 Code | TO-252 | |
| Drain-source On Resistance-Max | 0.015 Ω | |
| Pulsed Drain Current-Max (IDM) | 297 A | |
| DS Breakdown Voltage-Min | 75 V | |
| Avalanche Energy Rating (Eas) | 127 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| REACH SVHC | No SVHC |
Индекс :
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