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BUK7511-55B,127 Технические параметры
NXP USA Inc. BUK7511-55B,127 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Lifecycle Status | Obsolete (Last Updated: 4 days ago) | |
| Contact Plating | Tin | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Surface Mount | NO | |
| Number of Pins | 3Pins | |
| Supplier Device Package | TO-220AB | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| RoHS | Compliant | |
| Turn Off Delay Time | 41 ns | |
| Package | Tube | |
| Current - Continuous Drain (Id) @ 25℃ | 75A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Mfr | NXP USA Inc. | |
| Power Dissipation (Max) | 157W (Tc) | |
| Product Status | Obsolete | |
| Package Description | PLASTIC, SC-46, 3 PIN | |
| Package Style | FLANGE MOUNT | |
| Package Body Material | PLASTIC/EPOXY | |
| Manufacturer Package Code | SOT78A | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 175 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | BUK7511-55B,127 | |
| Package Shape | RECTANGULAR | |
| Manufacturer | NXP Semiconductors | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Risk Rank | 5.38 | |
| Part Package Code | TO-220 | |
| Drain Current-Max (ID) | 75 A | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Series | TrenchMOS™ | |
| JESD-609 Code | e3 | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Max Operating Temperature | 175 °C | |
| Min Operating Temperature | -55 °C | |
| HTS Code | 8541.29.00.75 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Subcategory | FET General Purpose Power | |
| Max Power Dissipation | 230 W | |
| Technology | MOSFET (Metal Oxide) | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSFM-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 157 W | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 11 ns | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 25A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 1mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 2604 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V | |
| Rise Time | 45 ns | |
| Drain to Source Voltage (Vdss) | 55 V | |
| Vgs (Max) | ±20V | |
| Polarity/Channel Type | N-CHANNEL | |
| Continuous Drain Current (ID) | 84 A | |
| JEDEC-95 Code | TO-220AB | |
| Gate to Source Voltage (Vgs) | 20 V | |
| Max Dual Supply Voltage | 55 V | |
| Drain Current-Max (Abs) (ID) | 75 A | |
| Drain-source On Resistance-Max | 0.011 Ω | |
| Drain to Source Breakdown Voltage | 55 V | |
| Pulsed Drain Current-Max (IDM) | 338 A | |
| Input Capacitance | 5.26 nF | |
| DS Breakdown Voltage-Min | 55 V | |
| Avalanche Energy Rating (Eas) | 173 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 157 W | |
| FET Feature | - | |
| Drain to Source Resistance | 11 mΩ | |
| Rds On Max | 8.5 mΩ | |
| Radiation Hardening | No |
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