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BUK752R7-30B,127 Технические параметры

NXP USA Inc.  BUK752R7-30B,127 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 75A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 300W Tc
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series TrenchMOS™
Published 2010
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
HTS Code 8541.29.00.75
Terminal Position SINGLE
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.7m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 6212pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 91nC @ 10V
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 75A
Drain-source On Resistance-Max 0.0027Ohm
Pulsed Drain Current-Max (IDM) 967A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 2300 mJ
RoHS Status ROHS3 Compliant

BUK752R7-30B,127 Документы

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