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BUK9505-30A,127 Технические параметры

NXP USA Inc.  BUK9505-30A,127 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Surface Mount NO
Package / Case TO-220-3
Mounting Type Through Hole
Transistor Element Material SILICON
Power Dissipation (Max) 230W Tc
Number of Elements 1 Element
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Current - Continuous Drain (Id) @ 25℃ 75A Tc
Published 1999
Series TrenchMOS™
Packaging Tube
Operating Temperature -55°C~175°C TJ
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
HTS Code 8541.29.00.75
Terminal Position SINGLE
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.6m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 8600pF @ 25V
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±10V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 75A
Drain-source On Resistance-Max 0.0054Ohm
Pulsed Drain Current-Max (IDM) 400A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 500 mJ
RoHS Status ROHS3 Compliant

BUK9505-30A,127 Документы

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