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BUK9E15-60E,127 Технические параметры

NXP USA Inc.  BUK9E15-60E,127 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Surface Mount NO
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 54A Tc
Drive Voltage (Max Rds On, Min Rds On) 5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 96W Tc
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series TrenchMOS™
Published 2012
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED
Terminal Position SINGLE
Свойство продукта Значение свойства
Reach Compliance Code not_compliant
Pin Count 3
Reference Standard AEC-Q101; IEC-60134
JESD-30 Code R-PSIP-T3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 13m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2651pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 20.5nC @ 5V
Drain to Source Voltage (Vdss) 60V
Vgs (Max) ±10V
Drain Current-Max (Abs) (ID) 54A
Drain-source On Resistance-Max 0.015Ohm
Pulsed Drain Current-Max (IDM) 216A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 40.5 mJ
RoHS Status ROHS3 Compliant
Просмотр сходства
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