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BUK9Y19-75B Технические параметры

NXP USA Inc.  BUK9Y19-75B technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Surface Mount NO
Number of Pins 4Pins
Number of Terminals 4Terminals
Transistor Element Material SILICON
RoHS Compliant
Package Description FLANGE MOUNT, R-PSFM-T4
Package Style FLANGE MOUNT
Moisture Sensitivity Levels 1
Package Body Material PLASTIC/EPOXY
Reflow Temperature-Max (s) 30
Rohs Code Yes
Manufacturer Part Number BUK9Y19-75B
Package Shape RECTANGULAR
Manufacturer Nexperia
Number of Elements 1 Element
Part Life Cycle Code Active
Ihs Manufacturer NEXPERIA
Risk Rank 5.39
Drain Current-Max (ID) 48.2 A
JESD-609 Code e3
ECCN Code EAR99
Resistance 14.7 mΩ
Terminal Finish Tin (Sn)
Свойство продукта Значение свойства
Max Operating Temperature 175 °C
Min Operating Temperature -55 °C
Max Power Dissipation 106 W
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
JESD-30 Code R-PSFM-T4
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Drain to Source Voltage (Vdss) 75 V
Polarity/Channel Type N-CHANNEL
Continuous Drain Current (ID) 48.2 A
Threshold Voltage 1.65 V
JEDEC-95 Code MO-235
Drain-source On Resistance-Max 0.019 Ω
Pulsed Drain Current-Max (IDM) 192 A
DS Breakdown Voltage-Min 75 V
Avalanche Energy Rating (Eas) 121 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Nominal Vgs 1.65 V
REACH SVHC No SVHC
Lead Free Lead Free
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