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BUK9Y53-100B Технические параметры
NXP USA Inc. BUK9Y53-100B technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Surface Mount | YES | |
| Number of Pins | 4Pins | |
| Number of Terminals | 4Terminals | |
| Transistor Element Material | SILICON | |
| RoHS | Compliant | |
| Package Description | SMALL OUTLINE, R-PSSO-G4 | |
| Package Style | SMALL OUTLINE | |
| Moisture Sensitivity Levels | 1 | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | 30 | |
| Rohs Code | Yes | |
| Manufacturer Part Number | BUK9Y53-100B | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Nexperia | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | NEXPERIA | |
| Risk Rank | 5.36 | |
| Drain Current-Max (ID) | 23 A | |
| Packaging | Cut Tape | |
| JESD-609 Code | e3 | |
| Termination | SMD/SMT | |
| Terminal Finish | Tin (Sn) | |
| Max Operating Temperature | 175 °C | |
| Min Operating Temperature | -55 °C |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Max Power Dissipation | 75 W | |
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | not_compliant | |
| JESD-30 Code | R-PSSO-G4 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 75 W | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Polarity/Channel Type | N-CHANNEL | |
| Continuous Drain Current (ID) | 23 A | |
| Threshold Voltage | 1.5 V | |
| JEDEC-95 Code | MO-235 | |
| Drain-source On Resistance-Max | 0.059 Ω | |
| Pulsed Drain Current-Max (IDM) | 94 A | |
| Dual Supply Voltage | 100 V | |
| DS Breakdown Voltage-Min | 100 V | |
| Avalanche Energy Rating (Eas) | 85 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Nominal Vgs | 1.5 V | |
| REACH SVHC | No SVHC | |
| Lead Free | Lead Free |
Индекс :
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