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J113,126 Технические параметры
NXP USA Inc. J113,126 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - JFETs | |
| Марка | ||
| Mounting Type | Through Hole | |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | |
| Surface Mount | NO | |
| Transistor Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Box (TB) | |
| Published | 1997 | |
| JESD-609 Code | e3 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) | |
| HTS Code | 8541.21.00.95 | |
| Terminal Position | BOTTOM | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Base Part Number | J113 | |
| Pin Count | 3 | |
| JESD-30 Code | O-PBCY-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Operating Mode | DEPLETION MODE | |
| Power - Max | 400mW | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Input Capacitance (Ciss) (Max) @ Vds | 6pF @ 10V VGS | |
| Drain-source On Resistance-Max | 100Ohm | |
| DS Breakdown Voltage-Min | 40V | |
| FET Technology | JUNCTION | |
| Power Dissipation-Max (Abs) | 0.4W | |
| Source Url Status Check Date | 2013-06-14 00:00:00 | |
| Current - Drain (Idss) @ Vds (Vgs=0) | 2mA @ 15V | |
| Voltage - Cutoff (VGS off) @ Id | 500mV @ 1μA | |
| Voltage - Breakdown (V(BR)GSS) | 40V | |
| Resistance - RDS(On) | 100Ohm | |
| RoHS Status | ROHS3 Compliant |
J113,126 Документы
- PCN Obsolescence/ EOLMultiple Devices 31/Dec/2011
- DatasheetsJ111,2,3
- Environmental InformationNXP RoHS3 Cert
- PCN PackagingDate Code Extended 18/Jul/2013
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