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MRF21010LSR1 Технические параметры
NXP USA Inc. MRF21010LSR1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - RF | |
| Марка | ||
| Package / Case | NI-360S | |
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Voltage Rated | 65V | |
| Packaging | Tape & Reel (TR) | |
| Published | 2009 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Frequency | 2.17GHz |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Base Part Number | MRF21010 | |
| JESD-30 Code | R-CDFP-F2 | |
| Configuration | SINGLE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | SOURCE | |
| Current - Test | 100mA | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Transistor Type | LDMOS | |
| Gain | 13.5dB | |
| DS Breakdown Voltage-Min | 65V | |
| Power - Output | 10W | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Voltage - Test | 28V | |
| RoHS Status | ROHS3 Compliant |
MRF21010LSR1 Документы
- PCN Obsolescence/ EOLRF Devices 01/Jul/2010
- DatasheetsMRF21010 Series
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