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MRF6S19140HSR3 Технические параметры

NXP USA Inc.  MRF6S19140HSR3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - RF
Марка
Factory Lead Time 10 Weeks
Package / Case NI-880S
Surface Mount YES
Transistor Element Material SILICON
Number of Elements 1 Element
Operating Temperature (Max.) 225°C
Voltage Rated 68V
Usage Level Military grade
Packaging Tape & Reel (TR)
Published 2007
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2Terminations
ECCN Code EAR99
HTS Code 8542.31.00.01
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Frequency 1.93GHz~1.99GHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MRF6S19140
JESD-30 Code R-CDFP-F2
Qualification Status Not Qualified
Configuration SINGLE
Operating Mode ENHANCEMENT MODE
Case Connection SOURCE
Current - Test 1.15A
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Gain 16dB
DS Breakdown Voltage-Min 68V
Power - Output 29W
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 530W
Voltage - Test 28V
RoHS Status ROHS3 Compliant

MRF6S19140HSR3 Документы

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