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MRF8P20165WHR3 Технические параметры
NXP USA Inc. MRF8P20165WHR3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - RF | |
| Марка | ||
| Factory Lead Time | 10 Weeks | |
| Package / Case | NI780-4 | |
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Operating Temperature (Max.) | 125°C | |
| Voltage Rated | 65V | |
| Packaging | Tape & Reel (TR) | |
| Published | 2006 | |
| Part Status | Not For New Designs | |
| Moisture Sensitivity Level (MSL) | Not Applicable | |
| Number of Terminations | 4Terminations | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.75 | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | 260 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Frequency | 1.98GHz~2.01GHz | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Base Part Number | MRF8P20165 | |
| JESD-30 Code | R-CDFM-F4 | |
| Qualification Status | Not Qualified | |
| Configuration | COMMON SOURCE, 2 ELEMENTS | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | SOURCE | |
| Current - Test | 550mA | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Transistor Type | LDMOS (Dual) | |
| Gain | 14.8dB | |
| DS Breakdown Voltage-Min | 65V | |
| Power - Output | 37W | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Voltage - Test | 28V | |
| RoHS Status | ROHS3 Compliant |
MRF8P20165WHR3 Документы
- DatasheetsMRF8P20165WH
- Environmental InformationNXP RoHS3 Cert
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