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MRF8S19260HSR6 Технические параметры
NXP USA Inc. MRF8S19260HSR6 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - RF | |
| Марка | ||
| Package / Case | SOT-1110B | |
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Operating Temperature (Max.) | 225°C | |
| Voltage Rated | 65V | |
| Packaging | Tape & Reel (TR) | |
| Published | 2012 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 8Terminations | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.75 | |
| Terminal Position | QUAD | |
| Terminal Form | FLAT |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Peak Reflow Temperature (Cel) | 260 | |
| Frequency | 1.99GHz | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Base Part Number | MRF8S19260 | |
| JESD-30 Code | R-CQFP-F8 | |
| Qualification Status | Not Qualified | |
| Operating Mode | ENHANCEMENT MODE | |
| Current - Test | 1.6A | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Transistor Type | LDMOS (Dual) | |
| Gain | 18.2dB | |
| DS Breakdown Voltage-Min | 65V | |
| Power - Output | 74W | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Voltage - Test | 30V | |
| RoHS Status | ROHS3 Compliant |
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