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NXP USA Inc. MRFE6S9125NR1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Свойство продукта | Значение свойства | |
---|---|---|
Классификация | Transistors - FETs, MOSFETs - RF | |
Марка | ||
Factory Lead Time | 10 Weeks | |
Package / Case | TO-270AB | |
Surface Mount | YES | |
Transistor Element Material | SILICON | |
Number of Elements | 1 Element | |
Operating Temperature (Max.) | 225°C | |
Voltage Rated | 66V | |
Packaging | Tape & Reel (TR) | |
Published | 2006 | |
JESD-609 Code | e3 | |
Part Status | Not For New Designs | |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) | |
Number of Terminations | 4Terminations | |
ECCN Code | EAR99 | |
Terminal Finish | Matte Tin (Sn) | |
HTS Code | 8541.29.00.75 | |
Terminal Position | DUAL | |
Terminal Form | FLAT |
Свойство продукта | Значение свойства | |
---|---|---|
Peak Reflow Temperature (Cel) | 260 | |
Frequency | 880MHz | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Base Part Number | MRFE6S9125 | |
JESD-30 Code | R-PDFP-F4 | |
Qualification Status | Not Qualified | |
Configuration | SINGLE | |
Operating Mode | ENHANCEMENT MODE | |
Case Connection | SOURCE | |
Current - Test | 950mA | |
Transistor Application | AMPLIFIER | |
Polarity/Channel Type | N-CHANNEL | |
Transistor Type | LDMOS | |
Gain | 20.2dB | |
DS Breakdown Voltage-Min | 66V | |
Power - Output | 27W | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Voltage - Test | 28V | |
RoHS Status | ROHS3 Compliant |