Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
MRFE6VP5600HR6 Технические параметры
NXP USA Inc. MRFE6VP5600HR6 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - RF | |
| Марка | ||
| Factory Lead Time | 10 Weeks | |
| Package / Case | NI-1230-4H | |
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Operating Temperature (Max.) | 225°C | |
| Voltage Rated | 130V | |
| Usage Level | Military grade | |
| Packaging | Tape & Reel (TR) | |
| Published | 2006 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | Not Applicable | |
| Number of Terminations | 4Terminations | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.75 | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | 260 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Frequency | 230MHz | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Base Part Number | MRFE6VP5600 | |
| JESD-30 Code | R-CDFM-F4 | |
| Qualification Status | Not Qualified | |
| Configuration | COMMON SOURCE, 2 ELEMENTS | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | SOURCE | |
| Current - Test | 100mA | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Transistor Type | LDMOS (Dual) | |
| Gain | 25dB | |
| DS Breakdown Voltage-Min | 130V | |
| Power - Output | 600W | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 1670W | |
| Voltage - Test | 50V | |
| RoHS Status | ROHS3 Compliant |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ