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MW6S010GNR1 Технические параметры
NXP USA Inc. MW6S010GNR1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - RF | |
| Марка | ||
| Factory Lead Time | 10 Weeks | |
| Package / Case | TO-270BA | |
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Operating Temperature (Max.) | 225°C | |
| Voltage Rated | 68V | |
| Usage Level | Military grade | |
| Packaging | Tape & Reel (TR) | |
| Published | 2009 | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) | |
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| HTS Code | 8541.29.00.75 | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | not_compliant | |
| Frequency | 960MHz | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Base Part Number | MW6S010 | |
| JESD-30 Code | R-PDSO-G2 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | SOURCE | |
| Current - Test | 125mA | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Transistor Type | LDMOS | |
| Gain | 18dB | |
| DS Breakdown Voltage-Min | 68V | |
| Power - Output | 10W | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 61.4W | |
| Voltage - Test | 28V | |
| RoHS Status | ROHS3 Compliant |
Индекс :
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