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PBR951,215 Технические параметры

NXP USA Inc.  PBR951,215 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 100mA
Number of Elements 1 Element
Operating Temperature 175°C TJ
Packaging Tape & Reel (TR)
Published 1998
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW NOISE, HIGH RELIABILITY
HTS Code 8541.21.00.75
Terminal Position DUAL
Свойство продукта Значение свойства
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number PBR951
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Configuration SINGLE
Power - Max 365mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 5mA 6V
Voltage - Collector Emitter Breakdown (Max) 10V
Transition Frequency 8000MHz
Frequency - Transition 8GHz
Power Dissipation-Max (Abs) 0.365W
Highest Frequency Band ULTRA HIGH FREQUENCY B
Noise Figure (dB Typ @ f) 1.3dB ~ 2dB @ 1GHz ~ 2GHz
RoHS Status ROHS3 Compliant

PBR951,215 Документы

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