Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок - Все продукты
- /
- Discrete Semiconductor Products
- /
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- /
- PDTA114EE,115
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
PDTA114EE,115 Технические параметры
NXP USA Inc. PDTA114EE,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single, Pre-Biased | |
| Марка | ||
| Mounting Type | Surface Mount | |
| Package / Case | SC-75, SOT-416 | |
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Current-Collector (Ic) (Max) | 100mA | |
| Number of Elements | 1 Element | |
| Operating Temperature (Max.) | 150°C | |
| Packaging | Tape & Reel (TR) | |
| Published | 2009 | |
| JESD-609 Code | e3 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Additional Feature | BUILT-IN BIAS RESISTOR RATIO IS 1 | |
| HTS Code | 8541.21.00.95 | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Peak Reflow Temperature (Cel) | 260 | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Base Part Number | PDTA114 | |
| Pin Count | 3 | |
| JESD-30 Code | R-PDSO-G3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN RESISTOR | |
| Power - Max | 150mW | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | PNP | |
| Transistor Type | PNP - Pre-Biased | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA 5V | |
| Current - Collector Cutoff (Max) | 100nA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500μA, 10mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50V | |
| Frequency - Transition | 180MHz | |
| Power Dissipation-Max (Abs) | 0.15W | |
| Resistor - Base (R1) | 10 k Ω | |
| Resistor - Emitter Base (R2) | 10 k Ω | |
| RoHS Status | ROHS3 Compliant |
PDTA114EE,115 Документы
- DatasheetsPDTA114E Series
- Environmental InformationNXP RoHS3 Cert
- PCN Obsolescence/ EOLAdvance Notice SOT416 Devices 02/Sep/2014 Multiple Devices 29/Dec/2014
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ