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PDTA114TE,115 Технические параметры

NXP USA Inc.  PDTA114TE,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Surface Mount YES
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 100mA
Number of Elements 1 Element
Operating Temperature (Max.) 150°C
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature BUILT IN BIAS RESISTOR
HTS Code 8541.21.00.95
Terminal Position DUAL
Свойство продукта Значение свойства
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number PDTA114
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN RESISTOR
Power - Max 150mW
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1mA 5V
Current - Collector Cutoff (Max) 1μA
Vce Saturation (Max) @ Ib, Ic 150mV @ 500μA, 10mA
Voltage - Collector Emitter Breakdown (Max) 50V
Power Dissipation-Max (Abs) 0.15W
Resistor - Base (R1) 10 k Ω
RoHS Status ROHS3 Compliant
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PDTA114TE,115 Документы

PDTA114TE,115 brand manufacturers: NXP USA Inc., Anli stock, PDTA114TE,115 reference price.NXP USA Inc.. PDTA114TE,115 parameters, PDTA114TE,115 Datasheet PDF and pin diagram description download.You can use the PDTA114TE,115 Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find PDTA114TE,115 pin diagram and circuit diagram and usage method of function,PDTA114TE,115 electronics tutorials.You can download from the Anli.