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PDTB123YK,115 Технические параметры

NXP USA Inc.  PDTB123YK,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SMT3; MPAK
Current-Collector (Ic) (Max) 500mA
Packaging Tape & Reel (TR)
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Свойство продукта Значение свойства
Base Part Number PDTB123
Power - Max 250mW
Transistor Type PNP - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 50mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 2.2 kOhms
Resistor - Emitter Base (R2) 10 kOhms
RoHS Status ROHS3 Compliant
Просмотр сходства

PDTB123YK,115 Документы

PDTB123YK,115 brand manufacturers: NXP USA Inc., Anli stock, PDTB123YK,115 reference price.NXP USA Inc.. PDTB123YK,115 parameters, PDTB123YK,115 Datasheet PDF and pin diagram description download.You can use the PDTB123YK,115 Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find PDTB123YK,115 pin diagram and circuit diagram and usage method of function,PDTB123YK,115 electronics tutorials.You can download from the Anli.