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NXP USA Inc. PDTB123YS,126 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single, Pre-Biased | |
| Марка | ||
| Mounting Type | Through Hole | |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | |
| Supplier Device Package | TO-92-3 | |
| Current-Collector (Ic) (Max) | 500mA | |
| Packaging | Tape & Box (TB) | |
| Published | 2009 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Base Part Number | PDTB123 | |
| Power - Max | 500mW | |
| Transistor Type | PNP - Pre-Biased | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 50mA 5V | |
| Current - Collector Cutoff (Max) | 500nA | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50V | |
| Resistor - Base (R1) | 2.2 kOhms | |
| Resistor - Emitter Base (R2) | 10 kOhms | |
| RoHS Status | ROHS3 Compliant |