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PDTB123YS,126 Технические параметры

NXP USA Inc.  PDTB123YS,126 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92-3
Current-Collector (Ic) (Max) 500mA
Packaging Tape & Box (TB)
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Свойство продукта Значение свойства
Base Part Number PDTB123
Power - Max 500mW
Transistor Type PNP - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 50mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 2.2 kOhms
Resistor - Emitter Base (R2) 10 kOhms
RoHS Status ROHS3 Compliant

PDTB123YS,126 Документы

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