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PDTC115EEF,115 Технические параметры

NXP USA Inc.  PDTC115EEF,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка
Mounting Type Surface Mount
Package / Case SC-89, SOT-490
Surface Mount YES
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 20mA
Number of Elements 1 Element
Operating Temperature (Max.) 150°C
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish TIN
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
Terminal Position DUAL
Свойство продукта Значение свойства
Terminal Form FLAT
Reach Compliance Code unknown
Base Part Number PDTC115
Pin Count 3
JESD-30 Code R-PDSO-F3
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN RESISTOR
Power - Max 250mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 5V
Current - Collector Cutoff (Max) 1μA
Vce Saturation (Max) @ Ib, Ic 150mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 100 k Ω
Resistor - Emitter Base (R2) 100 k Ω
RoHS Status ROHS3 Compliant
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PDTC115EEF,115 Документы

PDTC115EEF,115 brand manufacturers: NXP USA Inc., Anli stock, PDTC115EEF,115 reference price.NXP USA Inc.. PDTC115EEF,115 parameters, PDTC115EEF,115 Datasheet PDF and pin diagram description download.You can use the PDTC115EEF,115 Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find PDTC115EEF,115 pin diagram and circuit diagram and usage method of function,PDTC115EEF,115 electronics tutorials.You can download from the Anli.