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NXP USA Inc. PDTC143TE,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Свойство продукта | Значение свойства | |
---|---|---|
Классификация | Transistors - Bipolar (BJT) - Single, Pre-Biased | |
Марка | ||
Mounting Type | Surface Mount | |
Package / Case | SC-75, SOT-416 | |
Surface Mount | YES | |
Transistor Element Material | SILICON | |
Current-Collector (Ic) (Max) | 100mA | |
Number of Elements | 1 Element | |
Operating Temperature (Max.) | 150°C | |
Packaging | Tape & Reel (TR) | |
Published | 2003 | |
JESD-609 Code | e3 | |
Part Status | Obsolete | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 3Terminations | |
ECCN Code | EAR99 | |
Terminal Finish | Tin (Sn) | |
Additional Feature | BUILT-IN BIAS RESISTOR | |
Terminal Position | DUAL |
Свойство продукта | Значение свойства | |
---|---|---|
Terminal Form | GULL WING | |
Peak Reflow Temperature (Cel) | 260 | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Base Part Number | DTC143 | |
Pin Count | 3 | |
JESD-30 Code | R-PDSO-G3 | |
Qualification Status | Not Qualified | |
Configuration | SINGLE WITH BUILT-IN RESISTOR | |
Power - Max | 150mW | |
Transistor Application | SWITCHING | |
Polarity/Channel Type | NPN | |
Transistor Type | NPN - Pre-Biased | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1mA 5V | |
Current - Collector Cutoff (Max) | 1μA | |
Vce Saturation (Max) @ Ib, Ic | 100mV @ 250μA, 5mA | |
Voltage - Collector Emitter Breakdown (Max) | 50V | |
Power Dissipation-Max (Abs) | 0.15W | |
Resistor - Base (R1) | 4.7 k Ω | |
RoHS Status | ROHS3 Compliant |