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- PDTC144EE,135
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PDTC144EE,135 Технические параметры
NXP USA Inc. PDTC144EE,135 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single, Pre-Biased | |
| Марка | ||
| Mounting Type | Surface Mount | |
| Package / Case | SC-75, SOT-416 | |
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Current-Collector (Ic) (Max) | 100mA | |
| Number of Elements | 1 Element | |
| Operating Temperature (Max.) | 150°C | |
| Packaging | Tape & Reel (TR) | |
| Published | 2011 | |
| JESD-609 Code | e3 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Additional Feature | BUILT-IN BIAS RESISTOR RATIO IS 1 | |
| HTS Code | 8541.21.00.95 | |
| Terminal Position | DUAL |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Base Part Number | PDTC144 | |
| Pin Count | 3 | |
| JESD-30 Code | R-PDSO-G3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN RESISTOR | |
| Power - Max | 150mW | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN - Pre-Biased | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA 5V | |
| Current - Collector Cutoff (Max) | 1μA | |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500μA, 10mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50V | |
| Power Dissipation-Max (Abs) | 0.15W | |
| Resistor - Base (R1) | 47 k Ω | |
| Resistor - Emitter Base (R2) | 47 k Ω | |
| RoHS Status | ROHS3 Compliant |
PDTC144EE,135 Документы
- DatasheetsPDTC144
- Environmental InformationNXP RoHS3 Cert
- PCN Obsolescence/ EOLAdvance Notice SOT416 Devices 02/Sep/2014 Multiple Devices 29/Dec/2014
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