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PDTD113ZK,115 Технические параметры

NXP USA Inc.  PDTD113ZK,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Current-Collector (Ic) (Max) 500mA
Packaging Tape & Reel (TR)
Published 2007
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number PDTD113
Свойство продукта Значение свойства
Power - Max 250mW
Transistor Type NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 50mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 1 k Ω
Resistor - Emitter Base (R2) 10 k Ω
RoHS Status ROHS3 Compliant
Просмотр сходства

PDTD113ZK,115 Документы

PDTD113ZK,115 brand manufacturers: NXP USA Inc., Anli stock, PDTD113ZK,115 reference price.NXP USA Inc.. PDTD113ZK,115 parameters, PDTD113ZK,115 Datasheet PDF and pin diagram description download.You can use the PDTD113ZK,115 Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find PDTD113ZK,115 pin diagram and circuit diagram and usage method of function,PDTD113ZK,115 electronics tutorials.You can download from the Anli.