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NXP USA Inc. PMBFJ176,215 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Свойство продукта | Значение свойства | |
---|---|---|
Классификация | Transistors - JFETs | |
Марка | ||
Mounting Type | Surface Mount | |
Package / Case | TO-236-3, SC-59, SOT-23-3 | |
Surface Mount | YES | |
Transistor Element Material | SILICON | |
Number of Elements | 1 Element | |
Operating Temperature | 150°C TJ | |
Packaging | Tape & Reel (TR) | |
Published | 1997 | |
JESD-609 Code | e3 | |
Part Status | Obsolete | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 3Terminations | |
ECCN Code | EAR99 | |
Terminal Finish | Tin (Sn) | |
HTS Code | 8541.21.00.95 | |
Terminal Position | DUAL | |
Terminal Form | GULL WING | |
Peak Reflow Temperature (Cel) | 260 |
Свойство продукта | Значение свойства | |
---|---|---|
Time@Peak Reflow Temperature-Max (s) | 40 | |
Base Part Number | MBFJ176 | |
Pin Count | 3 | |
JESD-30 Code | R-PDSO-G3 | |
Qualification Status | Not Qualified | |
Configuration | SINGLE | |
Operating Mode | DEPLETION MODE | |
Power - Max | 300mW | |
FET Type | P-Channel | |
Transistor Application | SWITCHING | |
Input Capacitance (Ciss) (Max) @ Vds | 8pF @ 10V VGS | |
Drain-source On Resistance-Max | 250Ohm | |
DS Breakdown Voltage-Min | 30V | |
FET Technology | JUNCTION | |
Power Dissipation-Max (Abs) | 0.3W | |
Current - Drain (Idss) @ Vds (Vgs=0) | 2mA @ 15V | |
Voltage - Cutoff (VGS off) @ Id | 1V @ 10nA | |
Voltage - Breakdown (V(BR)GSS) | 30V | |
Resistance - RDS(On) | 250Ohm | |
RoHS Status | ROHS3 Compliant |