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NXP USA Inc. PMBFJ620,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - JFETs | |
| Марка | ||
| Mounting Type | Surface Mount | |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | |
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2001 | |
| JESD-609 Code | e3 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Additional Feature | LOW NOISE | |
| HTS Code | 8541.21.00.75 | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Base Part Number | MBFJ620 | |
| Pin Count | 6 | |
| JESD-30 Code | R-PDSO-G6 | |
| Qualification Status | Not Qualified | |
| Configuration | SEPARATE, 2 ELEMENTS | |
| Operating Mode | ENHANCEMENT MODE | |
| Power - Max | 190mW | |
| FET Type | 2 N-Channel (Dual) | |
| Transistor Application | AMPLIFIER | |
| Input Capacitance (Ciss) (Max) @ Vds | 5pF @ 10V | |
| DS Breakdown Voltage-Min | 25V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 0.19W | |
| Feedback Cap-Max (Crss) | 2.5 pF | |
| Current - Drain (Idss) @ Vds (Vgs=0) | 24mA @ 10V | |
| Voltage - Cutoff (VGS off) @ Id | 2V @ 1μA | |
| Voltage - Breakdown (V(BR)GSS) | 25V | |
| Resistance - RDS(On) | 50Ohm | |
| RoHS Status | ROHS3 Compliant |