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NXP USA Inc. PMEM4020APD,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ||
| Mounting Type | Surface Mount | |
| Package / Case | SC-74, SOT-457 | |
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Current-Collector (Ic) (Max) | 750mA | |
| Number of Elements | 1 Element | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2009 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Position | DUAL |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Form | GULL WING | |
| Reach Compliance Code | unknown | |
| Base Part Number | PMEM4020AP | |
| JESD-30 Code | R-PDSO-G6 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Power - Max | 500mW | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | PNP | |
| Transistor Type | PNP + Diode (Isolated) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 500mA 5V | |
| Current - Collector Cutoff (Max) | 100nA | |
| Vce Saturation (Max) @ Ib, Ic | 530mV @ 200mA, 2A | |
| Voltage - Collector Emitter Breakdown (Max) | 40V | |
| Transition Frequency | 150MHz | |
| Frequency - Transition | 150MHz | |
| Power Dissipation-Max (Abs) | 0.6W | |
| RoHS Status | ROHS3 Compliant |