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PMEM4030NS,115 Технические параметры

NXP USA Inc.  PMEM4030NS,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Current-Collector (Ic) (Max) 2A
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Part Status Obsolete
Свойство продукта Значение свойства
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 1W
Transistor Type NPN + Diode (Isolated)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 370mV @ 300mA, 3A
Voltage - Collector Emitter Breakdown (Max) 50V
Frequency - Transition 100MHz
RoHS Status ROHS3 Compliant
Просмотр сходства

PMEM4030NS,115 Документы

PMEM4030NS,115 brand manufacturers: NXP USA Inc., Anli stock, PMEM4030NS,115 reference price.NXP USA Inc.. PMEM4030NS,115 parameters, PMEM4030NS,115 Datasheet PDF and pin diagram description download.You can use the PMEM4030NS,115 Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find PMEM4030NS,115 pin diagram and circuit diagram and usage method of function,PMEM4030NS,115 electronics tutorials.You can download from the Anli.