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NXP USA Inc. PMWD20XN,118 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ||
| Mounting Type | Surface Mount | |
| Package / Case | 8-TSSOP (0.173, 4.40mm Width) | |
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 10.4A | |
| Number of Elements | 2 Elements | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | TrenchMOS™ | |
| Published | 2005 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 8Terminations | |
| ECCN Code | EAR99 | |
| Terminal Form | GULL WING | |
| Reach Compliance Code | unknown | |
| Pin Count | 8 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| JESD-30 Code | R-PDSO-G8 | |
| Qualification Status | Not Qualified | |
| Configuration | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Power - Max | 4.2W | |
| FET Type | 2 N-Channel (Dual) | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 22m Ω @ 4.2A, 10V | |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 740pF @ 16V | |
| Gate Charge (Qg) (Max) @ Vgs | 11.6nC @ 4.5V | |
| Drain to Source Voltage (Vdss) | 20V | |
| JEDEC-95 Code | MO-153 | |
| Drain Current-Max (Abs) (ID) | 10.4A | |
| Drain-source On Resistance-Max | 0.022Ohm | |
| DS Breakdown Voltage-Min | 20V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Logic Level Gate | |
| RoHS Status | ROHS3 Compliant |