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PMWD26UN,518 Технические параметры

NXP USA Inc.  PMWD26UN,518 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Mounting Type Surface Mount
Package / Case 8-TSSOP (0.173, 4.40mm Width)
Surface Mount YES
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 7.8A
Number of Elements 2 Elements
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series TrenchMOS™
Published 2005
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Terminal Form GULL WING
Reach Compliance Code unknown
Pin Count 8
Свойство продукта Значение свойства
JESD-30 Code R-PDSO-G8
Qualification Status Not Qualified
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power - Max 3.1W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 30m Ω @ 3.5A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1366pF @ 16V
Gate Charge (Qg) (Max) @ Vgs 23.6nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
JEDEC-95 Code MO-153AB
Drain Current-Max (Abs) (ID) 5.2A
Drain-source On Resistance-Max 7800Ohm
DS Breakdown Voltage-Min 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
RoHS Status ROHS3 Compliant
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PMWD26UN,518 Документы

PMWD26UN,518 brand manufacturers: NXP USA Inc., Anli stock, PMWD26UN,518 reference price.NXP USA Inc.. PMWD26UN,518 parameters, PMWD26UN,518 Datasheet PDF and pin diagram description download.You can use the PMWD26UN,518 Transistors - FETs, MOSFETs - Arrays, DSP Datesheet PDF, find PMWD26UN,518 pin diagram and circuit diagram and usage method of function,PMWD26UN,518 electronics tutorials.You can download from the Anli.