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PTVS18VS1UR Технические параметры

NXP USA Inc.  PTVS18VS1UR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Circuit Protection Kits - TVS Diodes
Марка
Mount Surface Mount
Number of Pins 2Pins
Breakdown Voltage / V 21 V
Reverse Stand-off Voltage 18 V
RoHS Compliant
Packaging Cut Tape
Max Operating Temperature 150 °C
Min Operating Temperature -55 °C
Polarity Unidirectional
Number of Channels 1Channel
Element Configuration Single
Max Reverse Leakage Current 100 nA
Свойство продукта Значение свойства
Clamping Voltage 29.2 V
Peak Pulse Current 13.7 A
Peak Pulse Power 400 W
Direction Unidirectional
Test Current 1 mA
Max Breakdown Voltage 22.1 V
ESD Protection Yes
Max Junction Temperature (Tj) 150 °C
Ambient Temperature Range High 150 °C
Min Breakdown Voltage 20 V
Width 1.9 mm
Height 1.1 mm
Length 2.8 mm
REACH SVHC No SVHC
PTVS18VS1UR brand manufacturers: NXP USA Inc., Anli stock, PTVS18VS1UR reference price.NXP USA Inc.. PTVS18VS1UR parameters, PTVS18VS1UR Datasheet PDF and pin diagram description download.You can use the PTVS18VS1UR Circuit Protection Kits - TVS Diodes, DSP Datesheet PDF, find PTVS18VS1UR pin diagram and circuit diagram and usage method of function,PTVS18VS1UR electronics tutorials.You can download from the Anli.