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2SC5231C9-TL-E Технические параметры

onsemi  2SC5231C9-TL-E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Supplier Device Package 3-SMCP
Mfr onsemi
Package Bulk
Product Status Obsolete
Current-Collector (Ic) (Max) 70mA
Свойство продукта Значение свойства
Series -
Operating Temperature 150°C (TJ)
Power - Max 100mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 135 @ 20mA, 5V
Gain 12dB
Voltage - Collector Emitter Breakdown (Max) 10V
Frequency - Transition 7GHz
Noise Figure (dB Typ @ f) 1dB @ 1GHz

2SC5231C9-TL-E Документы

  • Datasheets
2SC5231C9-TL-E brand manufacturers: onsemi, Anli stock, 2SC5231C9-TL-E reference price.onsemi. 2SC5231C9-TL-E parameters, 2SC5231C9-TL-E Datasheet PDF and pin diagram description download.You can use the 2SC5231C9-TL-E Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find 2SC5231C9-TL-E pin diagram and circuit diagram and usage method of function,2SC5231C9-TL-E electronics tutorials.You can download from the Anli.