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FJV3110RMTF-ON Технические параметры

onsemi  FJV3110RMTF-ON technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3
Mfr onsemi
Package Bulk
Product Status Active
Current-Collector (Ic) (Max) 100 mA
Свойство продукта Значение свойства
Series -
Power - Max 200 mW
Transistor Type NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 5V
Current - Collector Cutoff (Max) 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max) 40 V
Frequency - Transition 250 MHz
Resistor - Base (R1) 10 kOhms

FJV3110RMTF-ON Документы

  • Datasheets
FJV3110RMTF-ON brand manufacturers: onsemi, Anli stock, FJV3110RMTF-ON reference price.onsemi. FJV3110RMTF-ON parameters, FJV3110RMTF-ON Datasheet PDF and pin diagram description download.You can use the FJV3110RMTF-ON Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find FJV3110RMTF-ON pin diagram and circuit diagram and usage method of function,FJV3110RMTF-ON electronics tutorials.You can download from the Anli.