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KSE13009FTU Технические параметры

onsemi  KSE13009FTU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Package / Case TO-220-3 Full Pack
Mounting Type Through Hole
Surface Mount NO
Supplier Device Package TO-220F-3
Number of Terminals 3Terminals
Transistor Element Material SILICON
Mfr onsemi
Package Bulk
Product Status Last Time Buy
Current-Collector (Ic) (Max) 12 A
Emitter- Base Voltage VEBO 9 V
Pd - Power Dissipation 100 W
Transistor Polarity NPN
Maximum Operating Temperature + 150 C
Unit Weight 0.127339 oz
Minimum Operating Temperature -
Mounting Styles Through Hole
Gain Bandwidth Product fT 4 MHz
Manufacturer onsemi
Brand onsemi / Fairchild
Maximum DC Collector Current 12 A
DC Current Gain hFE Max 40
RoHS Details
Collector- Emitter Voltage VCEO Max 400 V
Package Description TO-220F, 3 PIN
Package Style FLANGE MOUNT
Package Body Material PLASTIC/EPOXY
Operating Temperature-Max 150 °C
Rohs Code Yes
Transition Frequency-Nom (fT) 4 MHz
Manufacturer Part Number KSE13009FTU
Package Shape RECTANGULAR
Number of Elements 1 Element
Свойство продукта Значение свойства
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Risk Rank 5.25
Part Package Code TO-220F
Series KSE
Operating Temperature 150°C (TJ)
JESD-609 Code e3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Transistors
Technology Si
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Reach Compliance Code not_compliant
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Configuration Single
Case Connection ISOLATED
Power - Max 100 W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Product Type BJTs - Bipolar Transistors
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 8 @ 5A, 5V
Current - Collector Cutoff (Max) -
Vce Saturation (Max) @ Ib, Ic 3V @ 3A, 12A
Voltage - Collector Emitter Breakdown (Max) 400 V
Frequency - Transition 4MHz
Collector Base Voltage (VCBO) 700 V
Power Dissipation-Max (Abs) 50 W
Collector Current-Max (IC) 12 A
DC Current Gain-Min (hFE) 6
Collector-Emitter Voltage-Max 400 V
Product Category Bipolar Transistors - BJT

KSE13009FTU Документы

  • Datasheets
KSE13009FTU brand manufacturers: onsemi, Anli stock, KSE13009FTU reference price.onsemi. KSE13009FTU parameters, KSE13009FTU Datasheet PDF and pin diagram description download.You can use the KSE13009FTU Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find KSE13009FTU pin diagram and circuit diagram and usage method of function,KSE13009FTU electronics tutorials.You can download from the Anli.