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NST4617MX2T5G Технические параметры

onsemi  NST4617MX2T5G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка
Package / Case X2DFN-3
Mfr onsemi
Package Tape & Reel (TR)
Product Status Active
Factory Pack QuantityFactory Pack Quantity 8000
Manufacturer onsemi
Brand onsemi
RoHS Details
Emitter- Base Voltage VEBO 5 V
Pd - Power Dissipation 166 mW
Transistor Polarity NPN
Maximum Operating Temperature + 150 C
DC Collector/Base Gain hfe Min 120
Свойство продукта Значение свойства
Collector-Emitter Saturation Voltage 80 mV
Minimum Operating Temperature - 55 C
Mounting Styles SMD/SMT
Gain Bandwidth Product fT 112 MHz
Maximum DC Collector Current 100 mA
Collector- Emitter Voltage VCEO Max 50 V
Series *
Packaging MouseReel
Subcategory Transistors
Technology Si
Configuration Single
Product Type BJTs - Bipolar Transistors
Collector Base Voltage (VCBO) 50 V
Product Category Bipolar Transistors - BJT
Просмотр сходства

NST4617MX2T5G Документы

  • Datasheets
NST4617MX2T5G brand manufacturers: onsemi, Anli stock, NST4617MX2T5G reference price.onsemi. NST4617MX2T5G parameters, NST4617MX2T5G Datasheet PDF and pin diagram description download.You can use the NST4617MX2T5G Transistors - Bipolar (BJT) - Arrays, DSP Datesheet PDF, find NST4617MX2T5G pin diagram and circuit diagram and usage method of function,NST4617MX2T5G electronics tutorials.You can download from the Anli.