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NSVMMBTH81LT3G Технические параметры

onsemi  NSVMMBTH81LT3G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3
Mfr onsemi
Package Tape & Reel (TR)
Product Status Active
Current-Collector (Ic) (Max) 50mA
Factory Pack QuantityFactory Pack Quantity 10000
Manufacturer onsemi
Brand onsemi
Series -
Свойство продукта Значение свойства
Operating Temperature -55°C ~ 150°C (TJ)
Packaging Reel
Subcategory Transistors
Power - Max 225mW
Product Type BJTs - Bipolar Transistors
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 10V
Gain -
Voltage - Collector Emitter Breakdown (Max) 20V
Frequency - Transition 600MHz
Noise Figure (dB Typ @ f) -
Product Category Bipolar Transistors - BJT
Просмотр сходства

NSVMMBTH81LT3G Документы

  • Datasheets
NSVMMBTH81LT3G brand manufacturers: onsemi, Anli stock, NSVMMBTH81LT3G reference price.onsemi. NSVMMBTH81LT3G parameters, NSVMMBTH81LT3G Datasheet PDF and pin diagram description download.You can use the NSVMMBTH81LT3G Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find NSVMMBTH81LT3G pin diagram and circuit diagram and usage method of function,NSVMMBTH81LT3G electronics tutorials.You can download from the Anli.