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NSVMMUN2132LT1G-M01 Технические параметры

onsemi  NSVMMUN2132LT1G-M01 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Mfr onsemi
Package Bulk
Product Status Obsolete
Current-Collector (Ic) (Max) 100 mA
Base Product Number NSVMMUN2132
Свойство продукта Значение свойства
Series -
Power - Max 246 mW
Transistor Type PNP - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 5mA, 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 4.7 kOhms
Resistor - Emitter Base (R2) 4.7 kOhms
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NSVMMUN2132LT1G-M01 Документы

  • Datasheets
NSVMMUN2132LT1G-M01 brand manufacturers: onsemi, Anli stock, NSVMMUN2132LT1G-M01 reference price.onsemi. NSVMMUN2132LT1G-M01 parameters, NSVMMUN2132LT1G-M01 Datasheet PDF and pin diagram description download.You can use the NSVMMUN2132LT1G-M01 Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find NSVMMUN2132LT1G-M01 pin diagram and circuit diagram and usage method of function,NSVMMUN2132LT1G-M01 electronics tutorials.You can download from the Anli.