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NSVMUN5216T1G Технические параметры

onsemi  NSVMUN5216T1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка
Lifecycle Status Production (Last Updated: 2 years ago)
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Supplier Device Package SC-70 (SOT323)
Mfr onsemi
Package Bulk
Product Status Obsolete
Current-Collector (Ic) (Max) 100 mA
Свойство продукта Значение свойства
Manufacturer Lifecycle Status ACTIVE (Last Updated: 2 years ago)
RoHS Compliant
Series -
Power - Max 202 mW
Transistor Type NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 5mA, 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 4.7 kOhms
Просмотр сходства

NSVMUN5216T1G Документы

  • Datasheets
NSVMUN5216T1G brand manufacturers: onsemi, Anli stock, NSVMUN5216T1G reference price.onsemi. NSVMUN5216T1G parameters, NSVMUN5216T1G Datasheet PDF and pin diagram description download.You can use the NSVMUN5216T1G Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find NSVMUN5216T1G pin diagram and circuit diagram and usage method of function,NSVMUN5216T1G electronics tutorials.You can download from the Anli.