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NTMYS4D5N04CTWG Технические параметры
onsemi NTMYS4D5N04CTWG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Mounting Type | Surface Mount | |
| Package / Case | SOT-1023, 4-LFPAK | |
| Supplier Device Package | LFPAK4 (5x6) | |
| Mfr | onsemi | |
| Package | Tape & Reel (TR) | |
| Product Status | Active | |
| Current - Continuous Drain (Id) @ 25℃ | 20A (Ta), 80A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Power Dissipation (Max) | 3.6W (Ta), 55W (Tc) | |
| Base Product Number | NTMYS4 | |
| Vds - Drain-Source Breakdown Voltage | 40 V | |
| Factory Pack QuantityFactory Pack Quantity | 3000 | |
| Manufacturer | onsemi |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Brand | onsemi | |
| Series | - | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Packaging | Reel | |
| Subcategory | MOSFETs | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 35A, 10V | |
| Vgs(th) (Max) @ Id | 3.5V @ 50μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1150 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V | |
| Drain to Source Voltage (Vdss) | 40 V | |
| Vgs (Max) | 20V | |
| Product Type | MOSFET | |
| FET Feature | - | |
| Product Category | MOSFET |
NTMYS4D5N04CTWG Документы
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