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onsemi NVMYS4D6N06CTWG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Свойство продукта | Значение свойства | |
---|---|---|
Классификация | Transistors - Special Purpose | |
Марка | ||
Factory Lead Time | 4 Weeks | |
Surface Mount | YES | |
Number of Terminals | 4Terminals | |
Transistor Element Material | SILICON | |
Part Life Cycle Code | Active | |
Manufacturer Package Code | 760AB | |
Drain Current-Max (ID) | 92 A | |
Moisture Sensitivity Levels | 1 | |
Number of Elements | 1 Element | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
JESD-609 Code | e3 |
Свойство продукта | Значение свойства | |
---|---|---|
Pbfree Code | Yes | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Position | SINGLE | |
Terminal Form | GULL WING | |
Reference Standard | AEC-Q101 | |
JESD-30 Code | R-PSSO-G4 | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Operating Mode | ENHANCEMENT MODE | |
Case Connection | DRAIN | |
Polarity/Channel Type | N-CHANNEL | |
Drain-source On Resistance-Max | 0.0047 Ω | |
Pulsed Drain Current-Max (IDM) | 565 A | |
DS Breakdown Voltage-Min | 60 V | |
Avalanche Energy Rating (Eas) | 524 mJ | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Power Dissipation-Max (Abs) | 79.5 W | |
Feedback Cap-Max (Crss) | 7 pF |