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NXH50M65L4Q1SG Технические параметры
onsemi NXH50M65L4Q1SG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Modules | |
| Марка | ||
| Mounting Type | Chassis Mount | |
| Package / Case | Module | |
| Supplier Device Package | 56-PIM (93x47) | |
| Mfr | onsemi | |
| Package | Tray | |
| Product Status | Active | |
| Current-Collector (Ic) (Max) | 48 A | |
| Pd - Power Dissipation | 72 W | |
| Maximum Operating Temperature | + 150 C | |
| Minimum Operating Temperature | - 40 C | |
| Factory Pack QuantityFactory Pack Quantity | 21 | |
| Manufacturer | onsemi | |
| Brand | onsemi | |
| RoHS | Details | |
| Collector- Emitter Voltage VCEO Max | 650 V |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Series | - | |
| Operating Temperature | 175°C (TJ) | |
| Packaging | Tray | |
| Subcategory | IGBTs | |
| Configuration | Full Bridge | |
| Power - Max | 86 W | |
| Input | Standard | |
| Product Type | IGBT Modules | |
| Current - Collector Cutoff (Max) | 300 μA | |
| Voltage - Collector Emitter Breakdown (Max) | 650 V | |
| Vce(on) (Max) @ Vge, Ic | 2.22V @ 15V, 50A | |
| IGBT Type | Trench Field Stop | |
| NTC Thermistor | Yes | |
| Input Capacitance (Cies) @ Vce | 3.137 nF @ 20 V | |
| Product | IGBT Silicon Modules | |
| Product Category | IGBT Modules |
NXH50M65L4Q1SG Документы
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