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15GN01CA-TB-E Технические параметры
ON Semiconductor 15GN01CA-TB-E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | ON Semiconductor | |
| Factory Lead Time | 5 Weeks | |
| Lifecycle Status | LIFETIME (Last Updated: 2 days ago) | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Mounting Type | Surface Mount | |
| Number of Pins | 3Pins | |
| Number of Elements | 1 Element | |
| Current-Collector (Ic) (Max) | 50mA | |
| Collector-Emitter Breakdown Voltage | 8V | |
| Published | 2012 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | 150°C TJ | |
| JESD-609 Code | e6 | |
| Pbfree Code | yes | |
| Part Status | Obsolete |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Bismuth (Sn/Bi) | |
| Max Power Dissipation | 200mW | |
| Frequency | 1.5GHz | |
| Pin Count | 3 | |
| Power Dissipation | 200mW | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 8V | |
| Max Collector Current | 50mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 10mA 5V | |
| Collector Base Voltage (VCBO) | 15V | |
| Emitter Base Voltage (VEBO) | 3V | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
15GN01CA-TB-E Документы
- PCN Obsolescence/ EOL1Q2018 Product EOL 31/Mar/2018
- Datasheets15GN01CA
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