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1N5822G Технические параметры

ON Semiconductor  1N5822G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 19 Weeks
Mounting Type Through Hole
Package / Case DO-201AA, DO-27, Axial
Number of Pins 2Pins
Supplier Device Package DO-201AD
Weight 4.535924g
Breakdown Voltage / V 40V
Packaging Bulk
Published 2000
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 125°C
Min Operating Temperature -65°C
Voltage - Rated DC 40V
Current Rating 3A
Base Part Number 1N5822
Polarity Standard
Element Configuration Single
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 2mA @ 40V
Свойство продукта Значение свойства
Output Current 3A
Voltage - Forward (Vf) (Max) @ If 525mV @ 3A
Forward Current 3A
Max Reverse Leakage Current 2mA
Operating Temperature - Junction -65°C~125°C
Max Surge Current 80A
Halogen Free Halogen Free
Voltage - DC Reverse (Vr) (Max) 40V
Current - Average Rectified (Io) 3A
Forward Voltage 525mV
Max Reverse Voltage (DC) 40V
Average Rectified Current 3A
Peak Reverse Current 2mA
Max Repetitive Reverse Voltage (Vrrm) 40V
Peak Non-Repetitive Surge Current 80A
Max Forward Surge Current (Ifsm) 80A
Diameter 5.3mm
Height 9.5mm
Length 9.4996mm
Width 6.35mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

1N5822G Документы

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