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1N5822RLG Технические параметры

ON Semiconductor  1N5822RLG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 19 Weeks
Contact Plating Tin
Mounting Type Through Hole
Package / Case DO-201AA, DO-27, Axial
Surface Mount NO
Number of Pins 2Pins
Weight 4.535924g
Diode Element Material SILICON
Number of Elements 1 Element
Packaging Tape & Reel (TR)
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Max Operating Temperature 125°C
Min Operating Temperature -65°C
Applications EFFICIENCY
Additional Feature LOW POWER LOSS, FREE WHEELING DIODE
HTS Code 8541.10.00.80
Voltage - Rated DC 40V
Terminal Form WIRE
Peak Reflow Temperature (Cel) 260
Current Rating 3A
Time@Peak Reflow Temperature-Max (s) 40
Свойство продукта Значение свойства
Base Part Number 1N5822
Pin Count 2
Polarity Standard
Element Configuration Single
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 2mA @ 40V
Output Current 3A
Voltage - Forward (Vf) (Max) @ If 525mV @ 3A
Case Connection ISOLATED
Forward Current 3A
Max Reverse Leakage Current 2mA
Operating Temperature - Junction -65°C~125°C
Max Surge Current 80A
Halogen Free Halogen Free
Forward Voltage 525mV
Max Reverse Voltage (DC) 40V
Average Rectified Current 3A
Number of Phases 1Phase
Peak Reverse Current 2mA
Max Repetitive Reverse Voltage (Vrrm) 40V
Peak Non-Repetitive Surge Current 80A
Max Forward Surge Current (Ifsm) 80A
Height 5.3mm
Length 9.5mm
Width 5.3mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

1N5822RLG Документы

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