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2N4401TAR Технические параметры

ON Semiconductor  2N4401TAR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 19 hours ago)
Factory Lead Time 23 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3Pins
Weight 240mg
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 40V
Collector-Emitter Saturation Voltage 750mV
Number of Elements 1 Element
hFEMin 100
Operating Temperature -55°C~150°C TJ
Packaging Tape & Box (TB)
Published 2001
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 40V
Свойство продукта Значение свойства
Max Power Dissipation 625mW
Terminal Position BOTTOM
Current Rating 600mA
Frequency 250MHz
Base Part Number 2N4401
Element Configuration Single
Power Dissipation 625mW
Transistor Application SWITCHING
Gain Bandwidth Product 250MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 1V
Vce Saturation (Max) @ Ib, Ic 750mV @ 50mA, 500mA
Transition Frequency 250MHz
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 6V
Height 5.33mm
Length 5.2mm
Width 4.19mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

2N4401TAR Документы

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